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- W2051204325 abstract "Abstract Diffusion of oxygen in thin films of silicon dioxide has been studied using oxygen isotopically enriched in oxygen of atomic mass 18 ( 18 O). This subject is of interest because thin films of dielectrics such as SiO 2 are proposed for use as protective coatings for solar mirrors in low earth orbit, which is a strongly oxidizing environment. Films of this material were prepared with a d.c. magnetron using reactive sputtering techniques. To produce 18 O-enriched SiO 2 , a standard silicon wafer 3.5 in in diameter was reactively sputtered using 18 O-enriched (95%) molecular oxygen as the plasma feed gas. The films were characterized using Rutherford backscattering spectrometry and secondary-ion mass spectroscopy (SIMS) to establish stoichiometry and purity. Subsequently, the films were exposed to an air-derived oxygen plasma in a standard laboratory plasma reactor for durations of up to 10 h. The concentration of 16 O as a function of depth was determined using SIMS profiling and compared with a baseline non-plasma-exposed sample. A value for the diffusivity of oxygen near the surface of these films was obtained and found to be about 10 −15 cm 2 s −1 at 50°C." @default.
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- W2051204325 date "1990-07-01" @default.
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- W2051204325 title "Isotopic study of oxygen diffusion in silicon dioxide thin films" @default.
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- W2051204325 doi "https://doi.org/10.1016/0040-6090(90)90286-m" @default.
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