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- W2051209757 abstract "The static and frequency dependent electrical resistivity in intermediate valence compounds arising from electron-phonon scattering is calculated by applying the memory function method to the periodic Anderson model. It is shown that in the static limit the resistivity may be considerably enhanced due to a finite fraction of 4f electrons being present at the Fermi level. This partial filling of the 4f shell is also responsible for the fact that the real part of the conductivity, which by Drude's formula is a Lorentzian of width 1/τ 0 , is drastically reduced to an effective width 1/τ." @default.
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- W2051209757 date "1980-10-01" @default.
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- W2051209757 title "On the electrical resistivity in intermediate valence compounds arising from electron-phonon scattering" @default.
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- W2051209757 doi "https://doi.org/10.1016/0304-8853(80)90463-1" @default.
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