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• W2051209798 abstract "The manuscript presents a comparison between two nonlinear procedures oriented to the investigation of the intrinsic I/V dynamic characteristics at a transistor's current-generator plane. These approaches, without the need of modeling device trapping and thermal effects, allow to obtain information at the current-generator reference plane that is more strictly linked to the device performance in terms of output power and efficiency. Experiments carried out on a 800-μm GaN HEMT are reported. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2835–2838, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27169" @default.
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• W2051209798 date "2012-09-25" @default.
• W2051209798 modified "2023-09-26" @default.
• W2051209798 title "Nonlinear embedding and de-embedding techniques for large-signal fet measurements" @default.
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• W2051209798 doi "https://doi.org/10.1002/mop.27169" @default.
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