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• W2051210361 abstract "We study the influence of main compensating defects: As antisites and Mn interstitials, known to occur in GaMnAs ferromagnetic semiconductor, on its structural properties. Our experimental results show that there is a balance between Mn interstitial and As antisite defects, leading to the reduced density of one type of defect upon increased density of another defect. The significant differences in the lattice parameters of GaMnAs with the different balance between these two types of defects were observed. The annealing induced reduction of GaMnAs lattice constant is inhibited in the samples with large density of As antisites." @default.
• W2051210361 created "2016-06-24" @default.
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• W2051210361 date "2004-02-19" @default.
• W2051210361 modified "2023-10-17" @default.
• W2051210361 title "Influence of defects on the lattice constant of GaMnAs" @default.
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• W2051210361 doi "https://doi.org/10.1103/physrevb.69.075206" @default.
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