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- W2051214616 abstract "A process is described for the simultaneous fabrication of enhancement and depletion mode, n-, and p-channel MOS/ SOS transistors necessitating six mask levels through metallization. The depletion-mode devices are actually deep depletion devices and an analysis of these structures when operated in a surface accumulation mode is presented. The enhancement devices are shown to have normal device characteristics with threshold voltages of less than 1.0 V. The depletion-mode devices also have normal characteristics with pinchoff values less than 1.0 V. Lambda diodes were fabricated from the depletion-mode devices which had peak current values of 5 µA at 0.5 V. In addition, a 16-bit memory array was fabricated comprised of all these structures which had an access time of 3 µs at 5.0 V." @default.
- W2051214616 created "2016-06-24" @default.
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- W2051214616 date "1977-06-01" @default.
- W2051214616 modified "2023-09-27" @default.
- W2051214616 title "Lambda diodes utilizing an enhancement-depletion CMOS/SOS process" @default.
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- W2051214616 doi "https://doi.org/10.1109/t-ed.1977.18815" @default.
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