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- W2051218983 abstract "Submicron particle counts were taken by monitoring hole etching in the RIE (reactive ion etching) process for approximately 30 days. One particle sensor was installed in the exhaust pipe from a process chamber and the second one in the exhaust pipe from loadlock chambers. More than 1000 wafers were processed using five different etching processes. Differences in the particle count per minute were observed among the etching processes. Reactive gas pressure, 13.56 MHz rf power and gas composition significantly influenced the generation of particles. The particle count rate increased as the etching time for one wafer increased. A large number of holes were observed on the etched photoresist surface with a scanning electron microscope (SEM) after prolonged etching time." @default.
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- W2051218983 date "1993-07-01" @default.
- W2051218983 modified "2023-09-28" @default.
- W2051218983 title "Submicron Particles Observed during Etching Process" @default.
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- W2051218983 doi "https://doi.org/10.1143/jjap.32.3140" @default.
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