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• W2051220897 abstract "Abstract Micromachined high aspect ratio field emitter areas have been realised to obtain a stable and uniform emission current. Dry etching based on the gas chopping method was used to etch the 42 μm high ultra sharp emitter tips in single-crystal silicon. Diamond-like carbon (DLC) films of 25–100 nm thickness were deposited from hydrocarbon precursor gas on the Si tips applying the inductively coupled plasma enhanced chemical vapour-deposition (ICPECVD) technique. The partial stabilisation of emission current vs. time due to oxygen or nitrogen plasma treatment could be related to surface passivation and/or the formation of a stable DLC/nanolayer on the emitter surface. It is shown that DLC-coated emitters provide comparable good long-term emission stability — the emission current was found to be almost stable during a 3 week operation cycle." @default.
• W2051220897 created "2016-06-24" @default.
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• W2051220897 date "2001-09-01" @default.
• W2051220897 modified "2023-09-27" @default.
• W2051220897 title "High aspect ratio silicon tips field emitter array" @default.
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• W2051220897 doi "https://doi.org/10.1016/s0167-9317(01)00492-0" @default.
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