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• W2051225395 abstract "Heterogeneous integration of III–V materials with silicon-on-insulator (SOI) waveguide circuitry by an adhesive die-to-wafer bonding process has been proposed as a solution to Si-based lasers and photodetectors. Here, we present the design and optimization of an InGaAs PIN photodetector vertically coupled with the underlying SOI waveguide, which could be readily fabricated using this bonding process. With the help of grating couplers, a thick bonding layer of 2.5 μm is applied, which inherently avoids the risk of low-bonding yield suffering in the evanescent coupling counterpart. An anti-reflection layer is also introduced between the bonding layer and the III–V layer stack to relieve the accuracy requirement for the bonding layer thickness. Besides, by optimizing the structure parameters, a high-absorption efficiency of 82% and a wide optical 1dB-bandwidth of 220nm are obtained. The analysis shows that the detection bandwidth of the present surface-illuminated photodetector is generally limited by transit-time in the i-InGaAs layer. The relationship of the detection bandwidth and the absorption efficiency versus the i-InGaAs layer thickness is presented for the ease of choosing proper structure parameters for specific applications. With the results presented here, the device can be readily fabricated." @default.
• W2051225395 created "2016-06-24" @default.
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• W2051225395 date "2014-05-05" @default.
• W2051225395 modified "2023-10-18" @default.
• W2051225395 title "InGaAs PIN photodetectors integrated and vertically coupled with silicon-on-insulator waveguides" @default.
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• W2051225395 doi "https://doi.org/10.1117/1.oe.53.5.057101" @default.
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