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- W2051226481 abstract "Amorphous Si1−xSnx:H films were deposited by Sputter Assisted Plasma CVD (SAP-CVD) which used glow discharge to decompose silane gas and to sputter a solid tin target simultaneously. Resulting films contain tin as 0<x<0.5 analysed by Auger spectroscopy. Dark conductivity changes from 5×10−10 (ohm-cm)−1 to 1.0 (ohm-cm)−1 as 0<x<0.5. Optical band gap decreases monotonically from 1.8 eV to 0.2 eV, as x increases from 0 to 0.5." @default.
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- W2051226481 date "1983-12-01" @default.
- W2051226481 modified "2023-09-26" @default.
- W2051226481 title "Amorphous-Si1−xSnx:H by sputter assisted plasma CVD" @default.
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- W2051226481 doi "https://doi.org/10.1016/0022-3093(83)90652-x" @default.
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