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- W2051234887 abstract "In this article, we propose a novel application of amorphous indium–gallium–zinc oxide (a-InGaZnO) thin films to micro electromechanical systems (MEMS). For this purpose, we investigated the residual stress in the a-InGaZnO thin films deposited by magnetron sputtering. The films with various residual stresses were characterized using atomic force microscopy, scanning electron microscopy, and X-ray diffraction. We found that the residual stress strongly depended on the sputtering gas pressure. In addition, we discovered a relationship between the residual stress and the microstructure in a-InGaZnO thin films. To gain more insight into the a-InGaZnO thin films with various residual stresses, we fabricated a-InGaZnO thin-film transistors (TFTs), and measured their transfer characteristics. We also fabricated a-InGaZnO TFTs on self-supported membranes, combining the typical TFT fabrication process and bulk micromachining techniques, for the application of a-InGaZnO to MEMS devices." @default.
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- W2051234887 date "2014-05-14" @default.
- W2051234887 modified "2023-10-02" @default.
- W2051234887 title "Fabrication of suspended amorphous indium–gallium–zinc oxide thin-film transistors using bulk micromachining techniques" @default.
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- W2051234887 doi "https://doi.org/10.7567/jjap.53.066503" @default.
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