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- W2051235193 abstract "The p-channel operation of a selfaligned heterojunction field-effect transistor (HFET) based on an Si/Si0.75Ge0.25 hetero-structure is demonstrated. Extrinsic transconductance gm greater than 8ms/mm for a device with 1μm gate length was measured at 300K. The high-frequency 3dB point has been measured to be 1.8GHz." @default.
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- W2051235193 date "1992-01-01" @default.
- W2051235193 modified "2023-09-24" @default.
- W2051235193 title "Inversion-channel Si/SiGe heterojunction field-effect transistor" @default.
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- W2051235193 doi "https://doi.org/10.1049/el:19921435" @default.
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