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- W2051246315 abstract "Tin oxide films were grown by Chemical Vapor Deposition (CVD) on glass and Si substrates at atmospheric pressure (AP) and temperatures varying between 430 and 580°C in a cold wall orizontal reactor, radiativelly heated, by oxidation of SnCl 4 vapors with O 2 . The structure of SnO 2 thin films has been studied by X-ray diffraction and their surface morphology by Scanning Electronic Microscopy. It was shown that films have a grain size that increases with temperature from 0.1 to 0.50nm as the temperature of deposition increases from 430 to 580°C. It was also shown that that they present very good uniformity at temperatures between 450 and 480°C. Electrical resistivity measurements have been performed in the temperature range 300-600K. The most conductive films were obtained at 480°C. Furthermore, these films exhibited the highest transmission, of the order of 80%. In this case the minimum resistivity value is about 1.6-10 -3 Ω cm. Tin oxide films present no base and they also exhibit high transmission in the visible range, larger than 80%." @default.
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- W2051246315 date "2001-08-01" @default.
- W2051246315 modified "2023-09-24" @default.
- W2051246315 title "Tin oxide APCVD thin films grown by SnCl4 oxidation on glass and Si substrates in a cold wall reactor" @default.
- W2051246315 doi "https://doi.org/10.1051/jp4:2001348" @default.
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