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- W2051249463 abstract "The adsorption and decomposition of water (D2O) on Si(100) has been studied using temperature-programmed desorption (TPD) and static secondary ion mass spectroscopy (SSIMS). At 100 K. D2O adsorbs both molecularly and dissociatively, forming SiOD and SiD; dissociative adsorption dominates at low exposures. Molecularly adsorbed D2O, when present in small amounts, dissociates between 100 and 200 K to form additional SiOD and SiD. At high coverages (monolayer and multilayer), molecular desorption at 170 K dominates. When the dissociative adsorption channel is nearly saturated, a new saturable D2O TPD peak appears (225 K). Although thermal decomposition of SiOD, to form Si-O-Si and SiD, starts as low as 300 K, most SiOD decomposes between 500 and 750 K with an activation energy of 16.5 ± 1.5 kcal/mol and a pre-exponential factor of 104.2 ± 0.5s−1, Most SiD decomposes to yield gaseous D2 between 750 and 850 K. A small fraction (10%), probably hydrogen-bonded to nonbridge-bonded oxygen defects ('O-Si), is, however, more stable and decomposes, releasing D2, between 850 and 1000 K. Surface O atoms desorb as silicon oxide between 850 and 1000 K. In contrast to earlier reports, our results imply that an H-free silicon oxide layer cannot be prepared under UHV conditions through wet-oxidation of Si(100)." @default.
- W2051249463 created "2016-06-24" @default.
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- W2051249463 date "1992-01-01" @default.
- W2051249463 modified "2023-10-12" @default.
- W2051249463 title "Adsorption and decomposition of water on Si(100): a TPD and SSIMS study" @default.
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- W2051249463 doi "https://doi.org/10.1016/0169-4332(92)90363-3" @default.
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