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- W2051254681 abstract "Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x-ray diffraction, 4 K photoluminescence, and capacitance-voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×1016 cm−3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high-resistivity material with an effective donor concentration of about 1014 and 1015 cm−3, respectively." @default.
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- W2051254681 date "1990-03-26" @default.
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- W2051254681 title "Molecular beam epitaxy of AlAs<sub>0.16</sub>Sb<sub>0.84</sub>and Al<sub>0.8</sub>Ga<sub>0.2</sub>As<sub>0.14</sub>Sb<sub>0.86</sub>on InAs substrates" @default.
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- W2051254681 doi "https://doi.org/10.1063/1.102526" @default.
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