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• W2051258003 abstract "Hot carrier injection (HCI) degradation is evaluated for n-metal oxide semiconductor (MOS) and pMOS high-κ-fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the Vg=Vd condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation." @default.
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• W2051258003 date "2009-01-01" @default.
• W2051258003 modified "2023-09-27" @default.
• W2051258003 title "Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations" @default.
• W2051258003 cites W1966736686 @default.
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• W2051258003 doi "https://doi.org/10.1116/1.3072919" @default.
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