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- W2051263288 abstract "Previous studies have shown that when diamond is implanted at elevated temperatures, graphitization can be avoided although the crystalline structure can not be completely restored. Rutherford backscattering-channeling experiments revealed that the damage remaining after hot implantations is of different nature than that observed after room temperature implantations. The damage in hot implanted diamond is characterized by the dechanneling of the probing beam, probably caused by extended defects, while the room temperature damage reveals itself as a clear peak in the backscattered particle spectrum and can be attributed to point defects that block the channel. The damage remaining after room temperature and hot implantations was studied in the present work by means of RBS-channeling experiments. The minimum yield behind the damaged region and the area under the damage peak (if observed) were investigated for the 〈111〉, 〈110〉 and 〈100〉 axes for different implantation and annealing conditions. It was found that the damage produced by high dose implantations can neither be completely healed by diamond implantation at elevated temperatures (300°C to 1450°C) nor by hot implantations followed by annealing at 1400°C. The defects remaining after room temperature implantations cause enhanced dechanneling along the 〈110〉 axis being probably a combination of interstitial carbon clusters and 〈111〉 bond-centered self-interstitials. The extended defects remaining after hot implantations, which induce isotropic channeling patterns for the three axial directions are tentatively identified as multivacancy clusters." @default.
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- W2051263288 date "1983-05-01" @default.
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- W2051263288 title "Lattice orientation of defects in ion-implanted diamond" @default.
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- W2051263288 doi "https://doi.org/10.1016/0167-5087(83)90828-1" @default.
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