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- W2051269846 abstract "Zinc Selenide, in polycrystalline and single crystal form, and chemical vapor deposition (CVD) grown diamond films were studied with respect to their application as materials for electron-beam activated switches. The hold-off fields of the three materials were found to exceed that of semi-insulating gallium arsenide by at least an order of magnitude. Highest hold-off fields for pulsed voltage operation were recorded for diamond at 1.8 MV/cm. The electron-beam induced conductance in the 1 mm thick single crystal zinc selenide switches reached values of 0.5 (Ωcm<sup>2</sup>)<sup>-1</sup> with an electron-beam current density of 20 mA/cm<sup>2</sup> at electron-energies of 150 keV. This corresponds to an electron-beam induced reduction of switch resistance from 10<sup>8</sup> Ω to 2 Ω per square centimeter. The dominant carrier loss mechanism in the single crystal zinc selenide switch was found to be direct recombination of electron-hole pairs. In this material, the current, after electron-beam turn-off, decays hyperbolically with 90% to 10% falitimes in the range of hundreds of nanoseconds. The electron-beam induced conductivity in CVD grown diamond films of 1 micrometer thickness is due to the subnanosecond carrier lifetime less than three orders lower than that of single crystal zinc selenide. Both materials, single crystal zinc selenide and diamond, showed a lock-on effect in current. For diamond it could be demonstrated, as before for gaffium arsenide, that this effect can be suppressed by proper choice of contacts." @default.
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- W2051269846 date "1992-05-12" @default.
- W2051269846 modified "2023-09-23" @default.
- W2051269846 title "Electron-beam-activated zinc selenide and diamond switches" @default.
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- W2051269846 doi "https://doi.org/10.1117/12.59072" @default.
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