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- W2051286123 endingPage "1892" @default.
- W2051286123 startingPage "1892" @default.
- W2051286123 abstract "Electrical properties of phosphorus-doped laser-crystallized silicon films were investigated. The analysis of free carrier optical absorption revealed that crystalline grains formed at laser energies of 360–375 mJ/cm 2 had high carrier mobilities of 40–50 cm 2 /Vs, which were close to that of doped single crystalline silicon. The mobility did not depend on the number of laser pulses. On the other hand, Hall effect measurements showed a marked increase in the carrier mobility of electrical current traversing grain boundaries from 3 to 28 cm 2 /Vs as the laser energy density increased from 160 to 375 mJ/cm 2 . The Hall mobility also increased as the number of laser pulses increased, although a single pulse irradiation resulted in a maximum carrier mobility of 15 cm 2 /Vs. These results suggest that a high laser energy density as well as numbers of multiple pulses are necessary to reduce disordered amorphous states and improve grain boundary properties." @default.
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- W2051286123 date "1999-04-01" @default.
- W2051286123 modified "2023-09-27" @default.
- W2051286123 title "Electrical Properties of Pulsed Laser Crystallized Silicon Films" @default.
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- W2051286123 doi "https://doi.org/10.1143/jjap.38.1892" @default.
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