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- W2051391929 abstract "CuInSe 2 (CIS) thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD) for crystallinity and field-emission scanning electron microscopy (FESEM) for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe 2 /ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe 2 films with (1 1 1), (2 2 0)/(2 0 4), and (3 1 2)/(1 1 6) planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe 2 formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe 2 solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature." @default.
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- W2051391929 date "2013-01-01" @default.
- W2051391929 modified "2023-09-26" @default.
- W2051391929 title "Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation" @default.
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- W2051391929 doi "https://doi.org/10.1155/2013/568904" @default.
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