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• W2051460140 abstract "Electron-spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single-step tunneling is the dominant transport mechanism. The current–voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses, indicating that tunneling enables significant spin injection from a metal into a semiconductor." @default.
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• W2051460140 date "2003-06-02" @default.
• W2051460140 modified "2023-10-11" @default.
• W2051460140 title "Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier" @default.
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• W2051460140 doi "https://doi.org/10.1063/1.1580631" @default.
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