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- W2051547575 abstract "This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the realx time was relatively short. With an increase in doped Mg content, the samples became P type, the photocurrent response become weak and the realx time became long." @default.
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- W2051547575 date "2002-09-16" @default.
- W2051547575 modified "2023-09-23" @default.
- W2051547575 title "Effects of Mg doping on the photoconductivity of GaN films deposited by MOCVD" @default.
- W2051547575 doi "https://doi.org/10.1117/12.483109" @default.
- W2051547575 hasPublicationYear "2002" @default.
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