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• W2051581750 abstract "We report the fabrication of high aspect ratio, sub-10 nm size, structures in silicon without involving any wet chemical etching. A 50 nm thick double layer of low and high molecular weight polymethylmethacrylate resist was exposed with an 80 kV electron beam of diameter smaller than 5 nm. After exposure the resist was developed in 3:7 cellusolve: methanol with ultrasonic agitation during development. A 5 nm thick AuPd film was deposited by ionized beam evaporation and a metal pattern was obtained by liftoff. Sub-10 nm AuPd dots were recorded with a scanning electron microscope. The AuPd pattern was then used as a mask on the Si substrate which was etched with reactive ion etching. Silicon nanocolumns with diameters ranging from 5 to 7 nm and an aspect ratio of height to diameter of about 7:1 were obtained." @default.
• W2051581750 created "2016-06-24" @default.
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• W2051581750 date "1993-08-23" @default.
• W2051581750 modified "2023-09-27" @default.
• W2051581750 title "Fabrication of high aspect ratio silicon pillars of <10 nm diameter" @default.
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• W2051581750 doi "https://doi.org/10.1063/1.109798" @default.
• W2051581750 hasPublicationYear "1993" @default.
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