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- W2051700178 abstract "The electrical characteristics of SIPOS-silicon heterojunctions are presented. The current-voltage characteristics as a function of temperature of SIPOS-silicon heterojunctions, with the SIPOS having different oxygen concentrations from 5.2 to 27.9 at.% and different film thicknesses, from 1200 to 5000 A, are reported. At temperatures above room temperature, the thermionic emission (TE) theory satisfactorily describes the carrier transport through the SIPOS films. At lower temperatures, a competing conduction mechanism comes into play which involves significant tunneling and the carrier transport is governed by thermionic field emission (TFE). Tarng's model, slightly modified to take account of the different device structure used, is presented which enables the current density-voltage characteristics of all four batches to be accurately predicted over the entire measured temperature range of each batch. Material parameters such as grain size, inter-grain barrier heights for electrons and holes, and the effective Richardson's constant, can be derived from the model and the measured current density-voltage temperature data. SIPOS stands for “semi-insulating polycrystalline silicon”." @default.
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- W2051700178 date "1987-05-01" @default.
- W2051700178 modified "2023-10-03" @default.
- W2051700178 title "The conduction properties of SIPOS" @default.
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- W2051700178 doi "https://doi.org/10.1016/0038-1101(87)90209-7" @default.
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