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- W2051705323 abstract "The electronic transport properties of the thin film transistor (TFT) devices consisting of carboxyl-modified single-walled carbon nanotube (c-SWCNT) network are studied. This work is focused on the analysis of the effect of chemical treatment on the electronic transport properties from these devices. The c-SWCNT thin film transistor (c-SWCNT TFT) devices were fabricated by a directed assembly method based on electrostatic interaction between amino-functionalized substrate and c-SWCNTs. The electrical characteristics of c-SWCNT TFTs were measured at room temperature. From the Raman results and the transport characteristics of c-SWCNT TFT devices, the transport mechanism in these devices can be accounted that the deep levels arising from vacancy-adatom complex induced the changes in the electronic band structure of SWCNTs." @default.
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- W2051705323 date "2011-01-01" @default.
- W2051705323 modified "2023-10-14" @default.
- W2051705323 title "Transport Characterization of Chemically-Functionalized Single-Walled Carbon Nanotube Thin Film Transistor" @default.
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- W2051705323 doi "https://doi.org/10.1149/1.3610343" @default.
- W2051705323 hasPublicationYear "2011" @default.
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