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- W2051804890 abstract "The minority carrier lifetime is measured in p-type Ge up to a majority carrier concentration of 1019 cm−3 using the photoconductive effect and the photo-magneto-electric effect. A stronger than linear dependence of the reciprocal lifetime on the carrier density is observed. Therefrom, from the weak temperature-dependence, from previous work and from the comparison with Si-data, we conclude that the dominant recombination mechanism at high carrier concentrations is the phonon-assisted band to band Auger-recombination. A transition coefficient of about 10−31 cm6 sec−1 is estimated. Die Minoritätsträgerlebensdauer in p-Ge wird bis zu Minoritätsträgerdichten von 1019 cm−3 gemessen. Aus Photoeffekt und photo-magnetoelektrischem Effekt ergibt sich ein stärker als linearer Abfall der Lebensdauer mit zunehmender Trägerdichte. Hieraus, aus der schwachen Temperaturabhängigkeit, aus Argumenten früherer Arbeiten und aus dem Vergleich zu Si wird der Schluβ gezogen, daβ bei hohen Trägerdichten die phonon-begleitete Band-Band Auger-Rekombination dominiert. Eine grobe Abschätzung ergibt einen Übergangskoeffizienten von 10−31 cm6 sec−1." @default.
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- W2051804890 date "1972-02-01" @default.
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- W2051804890 title "Minority carrier lifetime in highly doped Ge" @default.
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- W2051804890 doi "https://doi.org/10.1016/0038-1098(72)90016-6" @default.
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