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- W2051813676 abstract "Abstract The growth of semiconductor single crystals is reviewed. The techniques for growing large commercial crystals are examined, including Czochralski, Bridgman and flux growth, and the requirements of purity, homogeneity and lattice perfection are considered. The crystal quality is dependent on fluid flow in the melt and thermal gradients in the solid during crystal growth. These are investigated using mathematical modelling to establish the flow patterns in the melt during growth, and to determine the strain fields in the crystal due to thermal gradients, which lead to dislocation imperfections in the lattice. Examples of the application of mathematical modelling to the crystal growth of GaAs are given, and the results assessed. An example of mathematical modelling applied to the flux growth of the optical crystal Li2· 3B2O3 (LBO) is presented and related to experimental results obtained during the growth of these crystals." @default.
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- W2051813676 date "1995-03-01" @default.
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- W2051813676 title "Semiconductor and optical crystal growth" @default.
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