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• W2051813875 abstract "Low-voltage oxide-based thin-film transistors (TFTs) gated by stacked self-assembled octadecylphonic acid (ODPA) monolayer/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> electrolyte with an in-plane-gate structure are self-aligned by one nickel shadow mask at room temperature. The stacked gate dielectrics show a reduced gate leakage current with the aid of the well-organized dense-stacked ODPA monolayer buffer. The equivalent field-effect mobility, subthreshold voltage swing, and drain current on/off ratio of such TFTs are estimated to be 11 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s, 140 mV/dec, and 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> , respectively. Such low-voltage in-plane-gate TFTs are very promising for low-cost portable sensors." @default.
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• W2051813875 date "2012-04-01" @default.
• W2051813875 modified "2023-09-26" @default.
• W2051813875 title "In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/$hbox{SiO}_{2}$ Electrolyte Dielectrics" @default.
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• W2051813875 doi "https://doi.org/10.1109/led.2012.2182756" @default.
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