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- W2051844070 abstract "AlGaN/GaN high electron mobility transistors are demonstrated with a very high dc responsivity ( ~ 4.3×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> A/W at ~ 5×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-11</sup> W) to UV light. The gain mechanisms in the device are shown to be due to a photo voltage effect in both the AlGaN barrier layer and the GaN buffer layer. In the case of absorption in the barrier layer, trapped surface electrons, which are a characteristic of unpassivated devices, are neutralized by the movement of holes toward the surface, creating a net positive-gate bias. The photovoltage generated in the GaN buffer region is due to photocarrier separation and acts as a positive back-gate bias. The dc photocurrent response and responsivity are very strong functions of intensity that are explained by the proposed mechanisms, with absorption in the GaN buffer region dominating." @default.
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- W2051844070 date "2013-09-01" @default.
- W2051844070 modified "2023-10-06" @default.
- W2051844070 title "Highly Sensitive UV Detection Mechanism in AlGaN/GaN HEMTs" @default.
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- W2051844070 doi "https://doi.org/10.1109/ted.2013.2273618" @default.
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