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- W2051886069 abstract "A high temperature depletion-mode metal-insulator field effect transistor (MISFET) has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device was successfully operated at 300 °C with low gate leakage currents, displaying pinch-off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS mm−1 has been measured, the highest reported value to date for this type of device." @default.
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- W2051886069 date "1997-04-01" @default.
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- W2051886069 title "Thin film diamond metal-insulator field effect transistor for high temperature applications" @default.
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- W2051886069 doi "https://doi.org/10.1016/s0921-5107(96)01946-0" @default.
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