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- W2052021497 abstract "n and p-channel MOS transistors using ultrathin (≈ 60 Å) oxinitrides as gate dielectrics are studied. The threshold voltage, the interface trap density and the slow insulator trap densities are investigated as a function of the nitrogen concentration in the insulator. The positive charge in the insulating layers as well as the interface trap density are found to increase with the nitrogen concentration for both device types, in agreement with the results obtained using other nitridation methods. The in-depth study of the oxinitride-semiconductor interface traps carried out using charge pumping measurements reveals that the trap profiles have the same shape as that in state-of-the-art MOS transistors. These profiles evidence the increase of the trap concentration in the oxinitrides, emphasizing the correlation between the interface trap density, the oxinitride positive charge and the oxinitride trap density. The results also show that the trap density increases more rapidly with the nitrogen concentration in the nitrided layers than at the insulator-semiconductor interface. Finally, the comparison with noise measurements reveals that the oxinitride trap concentrations obtained using the CP method are lower than those extracted from noise measurements." @default.
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- W2052021497 date "1997-06-01" @default.
- W2052021497 modified "2023-09-25" @default.
- W2052021497 title "Electrical properties of ultrathin RTCVD oxinitride films in n and p-channel MOSFET's" @default.
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- W2052021497 doi "https://doi.org/10.1016/s0167-9317(97)00038-5" @default.
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