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- W2052178051 abstract "Bulk single crystals of GaN were used for epitaxial growth of GaN by metalorganic chemical vapor deposition. Photoluminescence (at 2 K) from polished substrates yields a broad near-band-edge emission band centered at 3.32 eV and the commonly observed yellow luminescence band. In contrast, the epitaxial layer displays a strong, sharp bound exciton line at 3.458 eV and a weak yellow band. Transmission electron microscopy reveals a sharp, planar interface between substrate and epilayer: The substrate contains small Ga inclusions, and the epilayer consists of less than 108 dislocations per cm2, mostly in the form of dislocation loops, which originate at the interface." @default.
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- W2052178051 date "1996-02-12" @default.
- W2052178051 modified "2023-10-14" @default.
- W2052178051 title "Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition" @default.
- W2052178051 doi "https://doi.org/10.1063/1.116230" @default.
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