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- W2052178698 abstract "The effects of group-V and group-III source flow rates on epi-layer properties have been studied for the MOCVD growth of InP and GaInPAs. For InP, the surface morphology and photoluminescence (PL) intensity were almost completely determined by PH3 flow rate, independent of TMIn flow rate. On the other hand, the PL full width at half maximum (FWHM) and electron mobility were determined by the VIII ratio. The carrier concentration of Se-doped InP was unchanged by both PH3 and TMIn flow rate, differing from that of Se-doped GaAs. The composition ratio of As to P for GaInPAs was mainly determined by the flow ratio of AsH3 to PH3, but affected by the total group-V flow rate (AsH3+PH3) and by the group-III alloy composition. It was found that the absolute PH3 pressure in the vapor phase was one of the most important growth parameters in determining the epi-layer properties." @default.
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- W2052178698 date "1988-01-01" @default.
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- W2052178698 title "Effects of growth parameters on layer properties for InP and related alloys grown by MOCVD" @default.
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- W2052178698 doi "https://doi.org/10.1016/0022-0248(88)90511-8" @default.
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