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- W2052193093 abstract "Abstract During extensive SEM studies of discrete and integrated circuit bipolar transistors a regular occurrence of bright areas in the thick oxide image was observed. These areas had distinctive geometries ranging from straight lines to more complicated shapes. Experimental and theoretical studies indicate that the contrast features are associated with defects at or close to the SiO 2 Si interface. An electrostatic analysis combined with the experimental results has been used to show that a trapped electron change distribution exists in the oxide which is related to oxide structure." @default.
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- W2052193093 date "1988-12-01" @default.
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- W2052193093 title "Interface defects and induced voltage contrast in SEM studies of bare SiO2Si systems" @default.
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- W2052193093 doi "https://doi.org/10.1016/0038-1101(88)90062-7" @default.
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