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• W2052306523 abstract "The effect of indium surfactants on the growth of N-polar GaN films on vicinal C-face SiC substrates by metalorganic chemical vapor deposition was investigated. Triangular hillocks formed on the surface of N-polar GaN without indium, resulting in a rough surface. When indium surfactants were introduced during GaN growth, the surface roughness was reduced from 18.1 to 3.5 nm over a 20 × 20 μm2 area. The photoluminescence characteristics of N-polar GaN film were also improved because of a reduction of carbon caused by the presence of indium, demonstrating that indium is a useful surfactant in the growth of N-polar GaN." @default.
• W2052306523 created "2016-06-24" @default.
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• W2052306523 date "2012-01-09" @default.
• W2052306523 modified "2023-10-16" @default.
• W2052306523 title "Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants" @default.
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• W2052306523 doi "https://doi.org/10.1063/1.3676275" @default.
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