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• W2052537462 abstract "The passivation of InP surfaces has been investigated by growing native thin film oxides with RF plasma oxidation in order to realise high-speed InP metal-insulator-semiconductor field effect transistors (MISFETS). The electrical properties of the InP interface have been analysed by variable-frequency C-V and G-V measurements using the well-established, high-frequency capacitance method, the low-frequency capacitance method and the AC conductance method. The authors report the results obtained for unannealed and postmetallisation-annealed diodes. The dispersion of interface state time constant in the depletion region resulting from the potential surface fluctuations has been observed. Also noted is a dispersion of C-V characteristics in the positive bias region. Good correlation has been obtained between theory and the measured conductance curves as a function of frequency at different values of the surface potential." @default.
• W2052537462 created "2016-06-24" @default.
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• W2052537462 date "1986-08-01" @default.
• W2052537462 modified "2023-09-24" @default.
• W2052537462 title "Interface properties of MIS structures prepared by plasma oxidation of n-InP" @default.
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• W2052537462 doi "https://doi.org/10.1088/0268-1242/1/2/009" @default.
• W2052537462 hasPublicationYear "1986" @default.
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