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• W2052695303 abstract "Abstract In order to interpret the effect of metal work function on the formation of the barrier height at metal/semiconductor (M/S) interface, the CdS/SnO 2 /In–Ga structures with several metals (Ag, Au, Al, Te) have been investigated by using I – V characteristics at room temperature. The main electrical parameters such as ideality factor ( n ), zero-bias barrier height ( Φ Bo ), series resistance ( R s ) have been determined and compared with each other. The values of n were found to be 3.00, 2.56, 3.83, and 3.31 for Al, Ag, Te, and Au/CdS/SnO 2 /In–Ga structures, respectively. The values of Φ Bo were also found to be 0.489 eV, 0.490 eV, 0.583 eV, 0.591 eV for Al, Ag, Te, and Au/CdS/SnO 2 /In–Ga structures, respectively. The Φ Bo dependence on the metal work function ( Φ m ) was found to vary almost linearly as Φ Bo  = 0.106 Φ m  + 0.028. The low value of the slope S (d Φ B /d Φ M  ≅ 0.106) shows a weak relationship between Φ Bo and Φ m due to serious Fermi-level pinning in the conduction band. In addition, the I – V plots have a rectifying behavior. The rectification ratio, defined by the ratio of forward to reverse current (RR =  I F / I R ) measured at the same absolute bias, was found as 11.96, 20.88, 35.82, and 75.61 for Al, Ag, Te, Au/CdS/SnO 2 /In–Ga diodes, respectively. In addition, the values of R s were determined from Ohm's Law and Norde's method. Analysis of I – V characteristics confirm that using of different metal (Al, Ag, Te, Au) has significant effect on electrical parameters of such devices." @default.
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• W2052695303 date "2013-09-01" @default.
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• W2052695303 title "The effect of metal work function on the barrier height of metal/CdS/SnO2/In–Ga structures" @default.
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• W2052695303 doi "https://doi.org/10.1016/j.cap.2013.04.010" @default.
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