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- W2052700748 abstract "Thin films of silicon oxide have been prepared by the reactive evaporation of silicon oxide in an atmosphere of oxygen onto glass substrates at room temperature and 200°C. The deposition conditions were carefully controlled and specified by a ratio p/r;p and r are respectively the oxygen and evaporant molecular infringement rates on the substrate. D.C. conduction, high frequency (1592 Hz) capacity and low frequency dielectric effect measurements were made on carefully protected capacitor systems of films of silicon oxide from 300 to 700 nm in thickness with aluminium electrodes. The low frequency measurements were made by observation of charging characteristics, with the high frequency component balanced out, and the total additional charge, that appeared with a time constant of from 1 to 10 ms, obtained by integration. The additional low frequency charge Q was found to depend upon the deposition conditions in a similar way to the d.c. leakage current J, i.e. it increased as p/r decreased and the structure moved towards SiO. Q was found to be most closely determined by the value of J at the same electric field rather than any particular deposition conditions. Both log Q and log J were proportional to the square root of the electric field. A consistent model for these effects is proposed in which electrons are injected into the film, the rate being controlled by the density inside the film, and these injected electrons are responsible for the additional low frequency capacitance." @default.
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- W2052700748 date "1970-07-01" @default.
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- W2052700748 title "Charge storage in evaporated silicon oxide films" @default.
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- W2052700748 doi "https://doi.org/10.1016/0040-6090(70)90014-3" @default.
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