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- W2052807841 abstract "The structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan=950 °C–1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including Eγ′, Eδ′, EX and the elusive predominant degradation-center S. Depth profiling after heating at 1200 °C shows that the S centers predominantly reside near the oxide borders, generally in anticorrelation with the Eγ′ distribution. The resulting anisotropic demagnetization effect has enabled inference of the S center susceptibility. As to the nature of the S center, an observed weak hyperfine structure may comply with the S center being of the type SinO3−n≡Si⋅ either the single n=1 or a mix of both the n=1,2 variants." @default.
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- W2052807841 date "2002-06-17" @default.
- W2052807841 modified "2023-10-16" @default.
- W2052807841 title "Characterization of <i>S</i> centers generated by thermal degradation in SiO2 on (100)Si" @default.
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- W2052807841 doi "https://doi.org/10.1063/1.1481539" @default.
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