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- W2052832783 abstract "Abstract In this study, we develop a novel way to fabricate InGaN/GaN LED chips with special shape for improving the output power. Crack‐free shaped GaN islands were first prepared on c‐axis sapphire substrate by using HVPE selective area growth. By doing so, GaN islands with flat top surface and inclined side faces are obtained. Then, the InGaN/GaN LED structure was grown on the top surface of the GaN island subsequently. The output powers of the p‐side up and the p‐side down shaped LED chip are 1.4 and 2.2 times the output power of the cubic chip, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2052832783 date "2007-01-01" @default.
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- W2052832783 title "Efficiency enhancement of 400 nm violet LEDs utilizing island‐like GaN thick film by HVPE technology" @default.
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- W2052832783 doi "https://doi.org/10.1002/pssc.200673566" @default.
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