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• W2052871504 abstract "We report the growth of epitaxial Pb(Zr0.54Ti0.46)O3 (PZT) thin films on yttria-stabilized zirconia buffered silicon substrates by pulsed laser deposition. We demonstrate a full in plane epitaxy of the buffer layer, showing a RMS roughness of less than 0.3 nm for a 120 nm thick layer. This buffer layer allows the growth of fully (110) textured oxide conducting SrRuO3 and subsequent functional oxide layers. Here the Pb(Zr,Ti)O3 oxide was chosen to demonstrate its possible integration in piezoelectric microelectromechanical systems on silicon." @default.
• W2052871504 created "2016-06-24" @default.
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• W2052871504 date "2012-12-06" @default.
• W2052871504 modified "2023-10-18" @default.
• W2052871504 title "Epitaxial PZT thin films on YSZ-buffered Si (001) substrates for piezoelectric MEMS or NEMS applications" @default.
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• W2052871504 doi "https://doi.org/10.1088/1757-899x/41/1/012012" @default.
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