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• W2052893241 abstract "GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction." @default.
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• W2052893241 date "2009-02-02" @default.
• W2052893241 modified "2023-10-05" @default.
• W2052893241 title "Evaluation of GaN substrates grown in supercritical basic ammonia" @default.
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• W2052893241 doi "https://doi.org/10.1063/1.3079813" @default.
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