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- W2052951249 abstract "The formation of the Al/GaAs(110) interface has been studied at room temperature using synchrotron-radiation-excited soft-X-ray photo-emission spectroscopy. It is demonstrated that the Al 2p core-level emission, at low Al coverages, provides evidence for at least three distinct Al phases. These are isolated Al adatoms, Al atoms in surface Ga sites and Al metallic clusters. The last two phases are observed at higher Al coverages and have been extensively studied by other groups. However, the nature of the first phase and the transition from the first to the second phase have been the subject of only a few studies. In this paper it is shown that the change from the first to the second phase, as determined from the Al2p emission, is similar to that observed when Al is deposited on InP(110). Additionally it is argued that the low-coverage Al2p core-level photo-emission spectra, which have been used previously to support the view that the Al adatoms are weakly interacting with the GaAs substrate, can also be interpreted in terms of sub-monolayer Al chemisorption." @default.
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- W2052951249 date "1987-01-30" @default.
- W2052951249 modified "2023-10-14" @default.
- W2052951249 title "The adsorption of Al on GaAs(110) studied using soft-X-ray photo-emission spectroscopy" @default.
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- W2052951249 doi "https://doi.org/10.1088/0022-3719/20/3/003" @default.
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