Matches in SemOpenAlex for { <https://semopenalex.org/work/W2053048052> ?p ?o ?g. }
Showing items 1 to 78 of
78
with 100 items per page.
- W2053048052 endingPage "2215" @default.
- W2053048052 startingPage "2210" @default.
- W2053048052 abstract "Chemical mechanical planarization (CMP) is an enabling technology in the fabrication of advanced semiconductor devices. The surface topography of the starting bare silicon substrate before CMP can have a significant impact on the results of the CMP process, specifically on the uniformity of the oxide film final thickness. The quantitative studies of this phenomenon are just beginning. In this article, a laser based optical scanning measurement was used to determine the front surface topography of the bare silicon substrates prior to thermal oxide growth. Fast two-dimensional mapping of the surface height variation is obtained with very high spatial and height resolution. The one-dimensional cross-section profile extracted from the measurement is demonstrated to have good correlation with the stylus based profiler measurement. A thermal oxide layer was grown and then polished in a high efficiency planarization process on a group of substrates, which had different levels of surface topography variations on the starting surface. A signature match between the oxide thickness variation and the silicon substrate front surface topography was identified. The resultant correlation reveals the potential impact on CMP process window from the starting material due to the degradation of within-die and die-to-die uniformity. Consequently, the product yield could be threatened. The optical topographical measurement using this laser scanning measurement is demonstrated here to be capable of providing fast, vital and unique information critical to achieving satisfactory results in the oxide CMP process." @default.
- W2053048052 created "2016-06-24" @default.
- W2053048052 creator A5051189409 @default.
- W2053048052 creator A5079562934 @default.
- W2053048052 creator A5089978533 @default.
- W2053048052 date "1999-09-01" @default.
- W2053048052 modified "2023-09-27" @default.
- W2053048052 title "Quantitative study of chemical mechanical planarization process affected by bare silicon wafer front surface topography" @default.
- W2053048052 cites W2042400613 @default.
- W2053048052 doi "https://doi.org/10.1116/1.590895" @default.
- W2053048052 hasPublicationYear "1999" @default.
- W2053048052 type Work @default.
- W2053048052 sameAs 2053048052 @default.
- W2053048052 citedByCount "1" @default.
- W2053048052 countsByYear W20530480522015 @default.
- W2053048052 crossrefType "journal-article" @default.
- W2053048052 hasAuthorship W2053048052A5051189409 @default.
- W2053048052 hasAuthorship W2053048052A5079562934 @default.
- W2053048052 hasAuthorship W2053048052A5089978533 @default.
- W2053048052 hasConcept C111106434 @default.
- W2053048052 hasConcept C111368507 @default.
- W2053048052 hasConcept C111919701 @default.
- W2053048052 hasConcept C120665830 @default.
- W2053048052 hasConcept C121332964 @default.
- W2053048052 hasConcept C127313418 @default.
- W2053048052 hasConcept C159985019 @default.
- W2053048052 hasConcept C160671074 @default.
- W2053048052 hasConcept C164086593 @default.
- W2053048052 hasConcept C171250308 @default.
- W2053048052 hasConcept C180088628 @default.
- W2053048052 hasConcept C191897082 @default.
- W2053048052 hasConcept C192562407 @default.
- W2053048052 hasConcept C2777289219 @default.
- W2053048052 hasConcept C2779227376 @default.
- W2053048052 hasConcept C2779851234 @default.
- W2053048052 hasConcept C41008148 @default.
- W2053048052 hasConcept C49040817 @default.
- W2053048052 hasConcept C544956773 @default.
- W2053048052 hasConceptScore W2053048052C111106434 @default.
- W2053048052 hasConceptScore W2053048052C111368507 @default.
- W2053048052 hasConceptScore W2053048052C111919701 @default.
- W2053048052 hasConceptScore W2053048052C120665830 @default.
- W2053048052 hasConceptScore W2053048052C121332964 @default.
- W2053048052 hasConceptScore W2053048052C127313418 @default.
- W2053048052 hasConceptScore W2053048052C159985019 @default.
- W2053048052 hasConceptScore W2053048052C160671074 @default.
- W2053048052 hasConceptScore W2053048052C164086593 @default.
- W2053048052 hasConceptScore W2053048052C171250308 @default.
- W2053048052 hasConceptScore W2053048052C180088628 @default.
- W2053048052 hasConceptScore W2053048052C191897082 @default.
- W2053048052 hasConceptScore W2053048052C192562407 @default.
- W2053048052 hasConceptScore W2053048052C2777289219 @default.
- W2053048052 hasConceptScore W2053048052C2779227376 @default.
- W2053048052 hasConceptScore W2053048052C2779851234 @default.
- W2053048052 hasConceptScore W2053048052C41008148 @default.
- W2053048052 hasConceptScore W2053048052C49040817 @default.
- W2053048052 hasConceptScore W2053048052C544956773 @default.
- W2053048052 hasIssue "5" @default.
- W2053048052 hasLocation W20530480521 @default.
- W2053048052 hasOpenAccess W2053048052 @default.
- W2053048052 hasPrimaryLocation W20530480521 @default.
- W2053048052 hasRelatedWork W1832220798 @default.
- W2053048052 hasRelatedWork W199084243 @default.
- W2053048052 hasRelatedWork W2013557620 @default.
- W2053048052 hasRelatedWork W2014225583 @default.
- W2053048052 hasRelatedWork W2052341660 @default.
- W2053048052 hasRelatedWork W2150512723 @default.
- W2053048052 hasRelatedWork W2153701889 @default.
- W2053048052 hasRelatedWork W2267409271 @default.
- W2053048052 hasRelatedWork W2946454824 @default.
- W2053048052 hasRelatedWork W2084542780 @default.
- W2053048052 hasVolume "17" @default.
- W2053048052 isParatext "false" @default.
- W2053048052 isRetracted "false" @default.
- W2053048052 magId "2053048052" @default.
- W2053048052 workType "article" @default.