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- W2053179916 abstract "We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore." @default.
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- W2053179916 date "2002-02-11" @default.
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- W2053179916 title "One-dimensional heterostructures in semiconductor nanowhiskers" @default.
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- W2053179916 doi "https://doi.org/10.1063/1.1447312" @default.
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