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- W2053187812 abstract "The duration (t) and temperature (T) of impurity diffusion in the process of junction formation determine the diffusion doping profile on the p+ and n sides of the p+nn+ junction. The diffusion profile can be computed from the error function involving the parameter s=2 square root (D(T)t) which takes different shapes for different values of s. Microwave properties of Ku, Ka, V and W band p+nn+ diodes in IMPATT mode for different values of s have been computed through DC and high-frequency analyses of the diodes following an accurate simulation program. The results indicate that the diode properties are optimized for a particular value of s for one particular frequency band. The diode properties deteriorate for both small and large values of s on either side of the optimum value. The results can be utilized for determination of appropriate diffusion parameters in the process of p+nn+ diode fabrication for realization of optimum RF performance at different frequency bands." @default.
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- W2053187812 date "1994-03-01" @default.
- W2053187812 modified "2023-10-16" @default.
- W2053187812 title "Effect of the diffusion impurity profile on the microwave properties of silicon p+nn+IMPATT diodes" @default.
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- W2053187812 doi "https://doi.org/10.1088/0268-1242/9/3/002" @default.
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