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- W2053204547 abstract "Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal–oxide–semiconductor (PMOS) transistors and metal–semiconductor–insulator–semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3×105 rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2 V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials." @default.
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- W2053204547 date "2004-07-30" @default.
- W2053204547 modified "2023-10-16" @default.
- W2053204547 title "Silicon-on-Insulating Multi-Layers for Total-Dose Irradiation Hardness" @default.
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- W2053204547 doi "https://doi.org/10.1088/0256-307x/21/8/053" @default.
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