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• W2053289474 abstract "We present results for B <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>22</sub> implants using ClusterBoron material for PMOS ultra-shallow junction (USJ) applications using solid phase epitaxial regrowth (SPER), high temperature spike anneal, impulse RTP (iRTP) and Flash Assisted RTP <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TM</sup> anneals. The effect of co-implants on boron activation (Rs) and junction depth (Xj) are compared for both B <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sub> SH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>22</sub> and BF <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> implants. We show that the Rs, Xj parameters obtained for carbon co-implant after spike anneal satisfy the requirements for the 45 nm node technology. With diffusion-less anneals using iRTP at 950°C, we show that B <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>22</sub> alone satisfies the 32nm node requirement of Xj at 15nm, but compromises Rs. With flash anneal, Rs and Xj show potential for producing Xj ˜ 15 nm and Rs ≪ 1000 ohms/sq that falls within the requirements for 32nm technology node devices. Additionally for B <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>22</sub> -only implants we show TEM images showing no end of range (EOR) damage even after diffusion-less anneals, including SPER anneals." @default.
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• W2053289474 date "2007-10-01" @default.
• W2053289474 modified "2023-09-23" @default.
• W2053289474 title "Implants of ClusterBoron® and ClusterCarbon^TM materials for USJ applications - a study with various anneal techniques" @default.
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• W2053289474 doi "https://doi.org/10.1109/rtp.2007.4383822" @default.
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