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- W2053291496 abstract "The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70 mS/mm and a gate breakdown voltage in excess of 100 V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6 GHz and an fmax of 11 GHz were measured for 1 µm gate length devices." @default.
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- W2053291496 date "1997-01-01" @default.
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- W2053291496 title "AlGaN/GaN HEMTs grown on SiC substrates" @default.
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- W2053291496 doi "https://doi.org/10.1049/el:19970122" @default.
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