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- W2053294212 abstract "The electronic mobility is an important parameter to express HgCdTe characters. The performance of photoconductive detectors, photovoltaic detectors and sprite detectors are all concerned with it. In our work, besides ionized impurity scattering, polar-optical scattering, acoustic deformation potential scattering and piezoelectric scattering, we also consider the dislocation scattering and give the result in accord with experiment. It shows that dislocation scattering is one of the important factors to influence HgCdTe electronic mobility. In our work, we also give a kind of amendment formula of ionized density. In addition, we also discuss the relationships between mobility and temperature and dislocation density. The result shows that, in the region 40K and 100K, the influence of dislocation is important and can not be neglected." @default.
- W2053294212 created "2016-06-24" @default.
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- W2053294212 date "1989-10-11" @default.
- W2053294212 modified "2023-10-05" @default.
- W2053294212 title "The Influence Of Dislocation Scattering On N-Type Hg 1-x Cd x Te Mobility" @default.
- W2053294212 doi "https://doi.org/10.1117/12.960669" @default.
- W2053294212 hasPublicationYear "1989" @default.
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