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• W2053328364 abstract "Ferroelectric heterostructures of Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si and Au/Pb(Zr0.52Ti0.48)O3/Si have been fabricated by using laser ablation technique. Electrical properties of these ferroelectric field-effect transistors have been characterized through both the current vs voltage and capacitance vs voltage (C–V) measurements. The C–V characteristics of Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si heterostructures demonstrate a polarization switching behavior, showing a memory window as much as 1 V at 1 kHz. In addition, the experimental results reveal that a SiO2 buffer layer is essential for memory properties in the Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si gate structure." @default.
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• W2053328364 date "1997-01-27" @default.
• W2053328364 modified "2023-10-16" @default.
• W2053328364 title "Formation and characteristics of Pb(Zr,Ti)O3 field-effect transistor with a SiO2 buffer layer" @default.
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• W2053328364 doi "https://doi.org/10.1063/1.118190" @default.
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